Error-prediction analyses in 1X, 2X and 3Xnm NAND flash memories for system-level reliability improvement of solid-state drives (SSDs)-Reference-Cited by-同舟云学术

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Error-prediction analyses in 1X, 2X and 3Xnm NAND flash memories for system-level reliability improvement of solid-state drives (SSDs)

Published:2013-04 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Tanakamaru S.,Doi M.,Takeuchi K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6523362/6531927/06531979.pdf?arnumber=6531979

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Random Flip Bit Aware Reading for Improving High-Density 3-D NAND Flash Performance;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-05

2. High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory as Hot-Data Storage;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-10

3. Prediction models of bit errors for NAND flash memory using 200 days of measured data;Review of Scientific Instruments;2019-06

4. SCORE;ACM Transactions on Architecture and Code Optimization;2018-12-31

5. Investigation of Retention Characteristics for Trap-Assisted Tunneling Mechanism in Sub 20-nm NAND Flash Memory;IEEE Transactions on Device and Materials Reliability;2017-12

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