Interaction between BTI and HCI degradation in High-K devices-Reference-Cited by-同舟云学术

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Interaction between BTI and HCI degradation in High-K devices

Published:2013-04 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Federspiel X.,Rafik M.,Angot D.,Cacho F.,Roy D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6523362/6531927/06532124.pdf?arnumber=6532124

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot-Carrier Damage in N-Channel EDMOS Used in Single Photon Avalanche Diode Cell through Quasi-Static Modeling;Micromachines;2024-01-30

2. The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms;Micromachines;2024-01-12

3. DC to AC analysis of HC vs. BTI damage in N-EDMOS used in single photon avalanche diode cell;Microelectronics Reliability;2023-11

4. Transient Self-Heating Effects on Mixed-Mode Hot Carrier and Bias Temperature Instability in FinFETs: Experiments and Modeling;IEEE Transactions on Electron Devices;2023-11

5. Modulation Of HCI in I/O analog devices Through Process Specifications;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08

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