Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor-Reference-Cited by-同舟云学术

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Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor

Published:2019-03 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Wang Miaomiao,Zhang Jingyun,Zhou Huimei,Southwick Richard G.,Kuo Chao Robin Hsin,Miao Xin,Basker Veeraraghavan S.,Yamashita Tenko,Guo Dechao,Karve Gauri,Bu Huiming,Stathis James H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8712125/8720395/08720573.pdf?arnumber=8720573

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Modeling of Negative Bias Temperature Instability (NBTI) for Gate-All-Around (GAA) Stacked Nanosheet Technology;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. Device Design and Reliability of GAA MBCFET;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors;Micromachines;2024-03-21

5. A Review of Reliability in Gate-All-Around Nanosheet Devices;Micromachines;2024-02-13

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