Trap Generation in IL and HK layers during BTI / TDDB stress in scaled HKMG N and P MOSFETs-Reference-Cited by-同舟云学术

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Trap Generation in IL and HK layers during BTI / TDDB stress in scaled HKMG N and P MOSFETs

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Reliability Physics Symposium
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Author:

Mukhopadhyay S.,Joshi K.,Chaudhary V.,Goel N.,De S.,Pandey R. K.,Murali K. V. R. M.,Mahapatra S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6850132/6860565/06861146.pdf?arnumber=6861146

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ab Initio Materials Modeling of Point Defects in a High-κ Metal Gate Stack of Scaled CMOS Devices: Variability Versus Engineering the Effective Work Function;Journal of Electronic Materials;2024-08-07

2. Study of hafnium defects in silicon dioxide using density functional theory;Materials Science in Semiconductor Processing;2024-05

3. Statistical Observations of Three Co-Existing NBTI Behaviors in 28 nm HKMG by On-Chip Monitor With Less Recovery Impact;IEEE Transactions on Circuits and Systems I: Regular Papers;2022-12

4. Combined Effect of TID Radiation and Electrical Stress on NMOSFETs;Micromachines;2022-10-29

5. Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors;Nature;2022-04-06

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