Impact of oxide liner properties on TSV Cu pumping and TSV stress-Reference-Cited by-同舟云学术

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Impact of oxide liner properties on TSV Cu pumping and TSV stress

Published:2015-04 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Reliability Physics Symposium
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Author:

De Messemaeker J.,Pedreira O. Varela,Moussa A.,Nabiollahi N.,Vanstreels K.,Van Huylenbroeck S.,Philipsen H.,Verdonck P.,Vandevelde B.,De Wolf I.,Beyne E.,Croes K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7106273/7112653/07112736.pdf?arnumber=7112736

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability Challenges in Advanced 3D Technologies: The Case of Through Silicon Vias and SiCN–SiCN Wafer-to-Wafer Hybrid-Bonding Technologies;IEEE Transactions on Device and Materials Reliability;2023-12

2. Metal Inter-layer Via Keep-out-zone in M3D IC: A Critical Process-aware Design Consideration;2023 24th International Symposium on Quality Electronic Design (ISQED);2023-04-05

3. Impact of TSV on TDDB Performance of Neighboring FinFET with HK/IL Gate Stacking;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

4. Electrochemical Behavior of 2M5S and Its Influence on Reduction of Cu Pumping and Keep-Out Zone;Journal of The Electrochemical Society;2020-03-18

5. A photo‐elastic microscopy study of the temperature dependency of stress induced by through silicon vias in silicon;physica status solidi c;2017-06-23

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