3D Modeling of Spatio-temporal Heat-transport in III-V Gate-all-around Transistors Allows Accurate Estimation and Optimization of Nanowire Temperature-Reference-Cited by-同舟云学术

3D Modeling of Spatio-temporal Heat-transport in III-V Gate-all-around Transistors Allows Accurate Estimation and Optimization of Nanowire Temperature

Published:2015-11 Issue:11 Volume:62 Page:3595-3604
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wahab Muhammad Abdul,Shin SangHoon,Alam Muhammad Ashraful

Funder

National Science Foundation Center through the Nano-Engineered Electronic Devices Simulation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7302109/07296637.pdf?arnumber=7296637

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