Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process

Abstract

Dynamic self-heating effect (SHE) of silicon-on-insulator (SOI) MOSFET is comprehensively evaluated by ultrafast pulsed I–V measurement in this work. It is found for the first time that the SHE complete heating response and cooling response of SOI MOSFETs are conjugated, with two-stage curves shown. We establish the effective thermal transient response model with stage superposition corresponding to the heating process. The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than in the second stage. In the first-stage heating process, the peak lattice temperature and current oscillation amplitude decrease by more than 25 K and 4% with frequency increasing to 10 MHz, and when duty cycle is reduced to 25%, the peak lattice temperature drops to 306 K and current oscillation amplitude decreases to 0.77%. Finally, the investigation of two-stage (heating and cooling) process provides a guideline for the unified optimization of dynamic SHE in terms of workload. As the operating frequency is raised to GHz, the peak temperature depends on duty cycle, and self-heating oscillation is completely suppressed.