Abstract
Abstract
Silicon-on-insulator devices are widely utilized in high-performance and high-reliability fields, facing challenges from self-heating effects (SHEs). However, research on the heat dissipation path closely related to SHEs remains incomplete. This paper initiates an in-depth analysis of thermal effects involving the fine structures within the heat dissipation path, using ultrafast pulse I–V measurements combined with thermal simulations. It is found in practical processes that the SHEs of scaled-down devices decreased by 40% rather than increased. Research shows the improvement is attributed to the reduction in the thickness of the buried oxide layer between different generations of processes, and the decrease in thermal sensitivity. Based on the two-stage SHE mechanism, the study clarifies for the first time that the box layer mainly affects first-stage heat dissipation, and the main timescale of impact is about the first 100 ns. In addition, the heat dissipation contact capability can effectively affect the temperature rise of first-stage SHEs. For the first time, we reveal that the TiN barrier layer with low thermal conductivity is the key factor limiting heat dissipation through contact. This study represents the crucial step toward a comprehensive investigation of SHEs, offering substantial support for device modeling.