Analysis of Graphene Tunnel Field-Effect Transistors for Analog/RF Applications
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7163647/07128361.pdf?arnumber=7128361
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ambipolarity Sensitivity Investigation using a Charge-Plasma TFET with Graphene Channel for Biomolecule Detection;ECS Journal of Solid State Science and Technology;2024-01-01
2. Investigation on Effect of Interface Trap Charges and Temperature in Gate Overlap Graphene Source Step Shape Double Gate Tunnel FET;ECS Journal of Solid State Science and Technology;2023-08-01
3. Gate Modulated Graphene Channel TFET with Enhanced Switching Current Ratio;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07
4. Performance of Graphene Oxide-based Memristor for Nonvolatile Memory and Neuromorphic Computing;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11
5. 2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects;npj 2D Materials and Applications;2022-11-16
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