Author:
Raghunathan Uppili S.,Chakraborty Partha S.,Bantu Tikurete G.,Wier Brian R.,Yasuda Hiroshi,Menz Philip,Cressler John D.
Funder
Semiconductor Research Corporation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
16 articles.
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1. The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
2. BEOL Thermal Resistance Extraction in SiGe HBTs;IEEE Transactions on Electron Devices;2022-12
3. Performance vs. Reliability Tradeoffs of Medium Breakdown and High Performance Cascode Amplifier Cells;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16
4. Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05
5. Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05