Performance vs. Reliability Tradeoffs of Medium Breakdown and High Performance Cascode Amplifier Cells
Author:
Affiliation:
1. Georgia Institute of Technology,School of Electrical and Computer Engineering,Atlanta,GA,USA,30332-0250
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051731.pdf?arnumber=10051731
Reference13 articles.
1. A Comparison of Field and Current-Driven Hot-Carrier Reliability in NPN SiGe HBTs
2. Bias- and Temperature-Dependent Accumulated Stress Modeling of Mixed-Mode Damage in SiGe HBTs
3. The Effects of Scaling and Bias Configuration on Operating-Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits
4. A comparison of base current reversal and bipolar snapback in advanced n-p-n bipolar transistors
5. Physical limitations on frequency and power parameters of transistors
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