A comparison of base current reversal and bipolar snapback in advanced n-p-n bipolar transistors

Author:

Hayden J.D.,Burnett D.,Nangle J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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4. Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions;Journal of Physics Communications;2020-06-01

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