A comparison of base current reversal and bipolar snapback in advanced n-p-n bipolar transistors-Reference-Cited by-同舟云学术

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A comparison of base current reversal and bipolar snapback in advanced n-p-n bipolar transistors

Published:1991-08 Issue:8 Volume:12 Page:407-409
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hayden J.D.,Burnett D.,Nangle J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/3413/00119147.pdf?arnumber=119147

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