Highly-reliable TaOx reram technology using automatic forming circuit-Reference-Cited by-同舟云学术

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Highly-reliable TaOx reram technology using automatic forming circuit

Published:2014-05 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Conference on IC Design & Technology
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Author:

Kawai Ken,Kawahara Akifumi,Yasuhara Ryutaro,Muraoka Shunsaku,Wei Zhiqiang,Azuma Ryotaro,Tanabe Kouhei,Shimakawa Kazuhiko

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6832295/6838579/06838600.pdf?arnumber=6838600

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analog memristive devices based on La₂NiO₄₊ _δ as synapses for spiking neural networks;Journal of Physics D: Applied Physics;2023-12-08

2. Domain Specific ReRAM Computation-in-Memory Design Considering Bit Precision and Memory Errors for Simulated Annealing;2022 IEEE International Symposium on Circuits and Systems (ISCAS);2022-05-28

3. Forming-Free Nonfilamentary Resistive Switching in W/WO3 – x/HFO2/Pd Structures;Nanobiotechnology Reports;2021-11

4. Non-volatile memory system design of edge server and cloud centralized server for multiple-tier 5G network;Japanese Journal of Applied Physics;2021-03-16

5. Analysis on Hybrid SSD Configuration with Emerging Non-Volatile Memories Including Quadruple-Level Cell (QLC) NAND Flash Memory and Various Types of Storage Class Memories (SCMs);IEICE Transactions on Electronics;2020-04-01

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