ReRAM Switching Performance based on Single-Walled Carbon Nanotubes Wire Electrode
Author:
Affiliation:
1. Gangneung-Wonju National University,Department of Electric Engineering,Gangneung,South Korea,25457
Funder
National Research Foundation of Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10049840/10049805/10049931.pdf?arnumber=10049931
Reference9 articles.
1. Characterization of carbon nanotubes by Raman spectroscopy;costa;Materials Science-Poland,2008
2. Voltage-switchable photocurrents in single-walled carbon nanotube–silicon junctions for analog and digital optoelectronics;lae;Nature Photonics,2014
3. Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes
4. Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes
5. A VLSI Array of Low-Power Spiking Neurons and Bistable Synapses With Spike-Timing Dependent Plasticity
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