High-frequency Full-bridge 48V DC-5V DC LLC Resonant Converter with AlGaN/GaN HEMTs
Author:
Affiliation:
1. China Resources Microelectronics (Chongqing) Limited,Chongqing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10420526/10420474/10420770.pdf?arnumber=10420770
Reference16 articles.
1. GaN-on-Si Power Technology: Devices and Applications
2. Gallium Nitride Integration: Going Where Silicon Power Can't Go [Expert View]
3. A multivariable turn-on/turn-off switching loss scaling approach for high-voltage GaN HEMTs in a hard-switching half-bridge configuration
4. Opportunities and design considerations of GaN HEMTs in ZVS applications
5. A High-Efficiency Hybrid Resonant Converter With Wide-Input Regulation for Photovoltaic Applications
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