Opportunities and design considerations of GaN HEMTs in ZVS applications

Author:

Lu Juncheng Lucas,Hou Ruoyu,Chen Di

Publisher

IEEE

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. High-frequency Full-bridge 48V DC-5V DC LLC Resonant Converter with AlGaN/GaN HEMTs;2023 5th International Conference on Electrical Engineering and Control Technologies (CEECT);2023-12-15

2. Experimental verification of the AC resistance effect in Insulated Metal Substrate based Power Converters;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

3. Analysis and Comparison of LLC Resonance Circuits for Wide Band Gap Semiconductor Component;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27

4. Design and Comparative Analysis of an Ultra-Highly Efficient, Compact Half-Bridge LLC Resonant GaN Converter for Low-Power Applications;Electronics;2023-06-28

5. High Frequency Induction Heating of Non-magnetic Metals with 24 VDC for a Terrestrial Antenna;2023 IEEE Wireless Power Technology Conference and Expo (WPTCE);2023-06-04

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