A multivariable turn-on/turn-off switching loss scaling approach for high-voltage GaN HEMTs in a hard-switching half-bridge configuration-Reference-Cited by-同舟云学术

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A multivariable turn-on/turn-off switching loss scaling approach for high-voltage GaN HEMTs in a hard-switching half-bridge configuration

Published:2017-10 Issue: Volume: Page:
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Container-title:2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Hou Ruoyu,Xu Jianchun,Chen Di

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8125522/8170483/08170542.pdf?arnumber=8170542

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Integrated Suppression Method of Both Gate-Source Voltage Oscillation and Crosstalk for GaN HEMT Gate Driver;IEEE Transactions on Power Electronics;2024-11

2. De-skewing Algorithm for Accurate Switching Loss Calculation in GaN HEMT;2024 IEEE Transportation Electrification Conference and Expo (ITEC);2024-06-19

3. A Flexible Setup for Dynamic On-State Resistance Measurements of GaN HEMTs With One-Factor-at-a-Time Capability;IEEE Transactions on Power Electronics;2024-06

4. Design of Vertical Superjunction AlGaN/GaN HEMT: A TCAD-Based Approach;Springer Proceedings in Physics;2024

5. High-frequency Full-bridge 48V DC-5V DC LLC Resonant Converter with AlGaN/GaN HEMTs;2023 5th International Conference on Electrical Engineering and Control Technologies (CEECT);2023-12-15

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