An Integrated Suppression Method of Both Gate-Source Voltage Oscillation and Crosstalk for GaN HEMT Gate Driver
Author:
Affiliation:
1. Department of electrical engineering, Harbin Institute of Technology, Harbin, China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/63/10679334/10591431.pdf?arnumber=10591431
Reference35 articles.
1. A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT
2. Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMT
3. Gate-Drive Power Supply With Decayed Negative Voltage to Solve Crosstalk Problem of GaN Synchronous Buck Converter
4. Ultralow Input–Output Capacitance PCB-Embedded Dual-Output Gate-Drive Power Supply for 650 V GaN-Based Half-Bridges
5. Quantitative Model-Based False Turn-on Evaluation and Suppression for Cascode GaN Devices in Half-Bridge Applications
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