A 15.5-dBm 160-GHz High-Gain Power Amplifier in SiGe BiCMOS Technology-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A 15.5-dBm 160-GHz High-Gain Power Amplifier in SiGe BiCMOS Technology

Published:2017-02 Issue:2 Volume:27 Page:177-179
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Furqan Muhammad,Ahmed Faisal,Heinemann Bernd,Stelzer Andreas

Funder

EU Commission through the FP7 for R&D within the DOTSEVEN

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/7851093/07839241.pdf?arnumber=7839241

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 140- and 220-GHz Dual-Band Amplifier in 130-nm SiGe BiCMOS Process;IEEE Transactions on Terahertz Science and Technology;2024-09

2. A Full G-band Power Amplifier with 34% Peak PAE in InP-DHBT Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

3. A 110-160GHz Wideband Power Amplifier in 0.13μm SiGe BiCMOS with 14.12dBm P_sat and 9.26% PAE;2023 IEEE MTT-S International Wireless Symposium (IWS);2023-05-14

4. A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band;Proceedings of the IEEE;2023-03

5. A Compact 140-GHz Power Amplifier With 15.4-dBm $P_{\mathrm{sat}}$ and 14.25% Peaking PAE in 28-nm Bulk CMOS Process;IEEE Transactions on Microwave Theory and Techniques;2023

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP