Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond-Reference-Cited by-同舟云学术

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Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond

Published:2010-02 Issue: Volume: Page:
ISSN:
Container-title:2010 IEEE International Solid-State Circuits Conference - (ISSCC)
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Author:

Khakifirooz Ali,Cheng Kangguo,Jagannathan Basanth,Kulkarni Pranita,Sleight Jeffrey W.,Shahrjerdi Davood,Chang Josephine B.,Lee Sungjae,Li Junjun,Bu Huiming,Gauthier Robert,Doris Bruce,Shahidi Ghavam

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5428240/5433812/05434014.pdf?arnumber=5434014

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4. Investigation of Dual Metal Gate Schottky Barrier MOSFET for Suppression of Ambipolar Current;IETE Journal of Research;2020-09-29

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