Publisher
Springer International Publishing
Reference27 articles.
1. Asenov, A., Brown, A.R., Watling, J.R.: Quantum corrections in the simulation of decanano MOSFETs. Solid State Electron. 47(7), 1141–1145 (2003)
2. Colinge, J.P.: FinFETs and Other Multi-Gate Transistors. Springer, New York (2007). https://doi.org/10.1007/978-0-387-71752-4
3. Diaz-Llorente, C., Sampedro, C., Gamiz, F., Godoy, A., Donetti, L.: Impact of S/D doping profile into electrical properties in nanoscaled UTB2SOI devices. In: Proceedings of EUROSOI 2014, O06 (2014)
4. Fenouillet-Beranger, C., et al.: Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below. Solid-State Electron. 54(9), 849–854 (2010)
5. Ferry, D., Ramey, S., Shifren, L., Akis, R.: The effective potential in device modeling: the good, the bad and the ugly. J. Comput. Electron. 1, 59–65 (2002)
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