19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme-Reference-Cited by-同舟云学术

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19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme

Published:2014-02 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC)
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Author:

Chang Meng-Fan,Wu Jui-Jen,Chien Tun-Fei,Liu Yen-Chen,Yang Ting-Chin,Shen Wen-Chao,King Ya-Chin,Lin Chorng-Jung,Lin Ku-Feng,Chih Yu-Der,Natarajan Sreedhar,Chang Jonathan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6747109/6757318/06757457.pdf?arnumber=6757457

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