A PUF scheme using competing oxide rupture with bit error rate approaching zero-Reference-Cited by-同舟云学术

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A PUF scheme using competing oxide rupture with bit error rate approaching zero

Published:2018-02 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Solid - State Circuits Conference - (ISSCC)
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Author:

Wu Meng-Yi,Yang Tsao-Hsin,Chen Lun-Chun,Lin Chi-Chang,Hu Hao-Chun,Su Fang-Ying,Wang Chih-Min,Huang James Po-Hao,Chen Hsin-Ming,Lu Chris Chun-Hung,Yang Evans Ching-Sung,Shen Rick Shih-Jye

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8304413/8310156/08310218.pdf?arnumber=8310218

Cited by 60 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unveiling the Vulnerability of Oxide-Breakdown-Based PUF;IEEE Electron Device Letters;2024-05

2. Exploiting Body-Driven Feedbacks in Physical Unclonable Functions for Ultra Low Voltage, Ultra Low Power Applications: A 0.3 V Weak-PUF;IEEE Transactions on Circuits and Systems I: Regular Papers;2024

3. A Reconfigurable LDO-Assisted Physically Unclonable Function Achieving a Zero-BER With 14% Masking;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-08

4. A CMOS-integrated spintronic compute-in-memory macro for secure AI edge devices;Nature Electronics;2023-07-13

5. Highly Reliable and Secure PUF Using Resistive Memory Integrated Into a 28 nm CMOS Process;IEEE Transactions on Electron Devices;2023-05

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