Capacitive-coupling wordline boosting with self-induced V<inf>CC</inf> collapse for write V<inf>MIN</inf> reduction in 22-nm 8T SRAM-Reference-Cited by-同舟云学术

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Capacitive-coupling wordline boosting with self-induced VCC collapse for write VMIN reduction in 22-nm 8T SRAM

Published:2012-02 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE International Solid-State Circuits Conference
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Author:

Kulkarni Jaydeep,Geuskens Bibiche,Karnik Tanay,Khellah Muhammad,Tschanz James,De Vivek

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6171933/6176863/06176990.pdf?arnumber=6176990

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. A 128-kbit GC-eDRAM With Negative Boosted Bootstrap Driver for 11.3× Lower-Refresh Frequency at a 2.5% Area Overhead in 28-nm FD-SOI;IEEE Solid-State Circuits Letters;2023

4. Cluster Index Modulation for Reconfigurable Intelligent Surface-Assisted mmWave Massive MIMO;IEEE Transactions on Wireless Communications;2023

5. A two-dimension half-select free 12T SRAM cell with enhanced write ability and read stability for bit-interleaving architecture;IEICE Electronics Express;2022-12-10

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