Demonstration of Fatigue and Recovery Phenomena in Hf0.5Zr0.5O2-based 1T1C FeRAM Memory Arrays
Author:
Affiliation:
1. Sony Semiconductor Solutions Corporation,Atsugi,Kanagawa,Japan,243-0014
2. NaMLab gGmbH,Dresden,Germany,01187
3. Fraunhofer IPMS - Center Nanoelectronics Technologies,Dresden,Germany,01099
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9797886/9797892/09797943.pdf?arnumber=9797943
Reference5 articles.
1. High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application
2. SoC Compatible 1T1C FeRAM Memory Array Based on Ferroelectric Hf0.5Zr0.5O2
3. Characterization of fatigue and its recovery behavior in ferroelectric HfZrO;liao;IEEE Symp VLSI Tech,2021
4. Ferroelectricity in hafnium oxide thin films
5. Ferroelectric Memories and Beyond;muller;Tutorial,2019
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1. Methodology for Testing Key Parameters of Array-Level Small-Area Hafnium-Based Ferroelectric Capacitors Using Time-to-Digital Converter and Capacitance Calibration Circuits;Micromachines;2023-09-27
2. Metal–Ferroelectric–Semiconductor Tunnel Junction: Essential Physics and Design Explorations;IEEE Transactions on Electron Devices;2023-06
3. Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited);2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
4. High endurance (>1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM;Applied Physics Letters;2023-02-20
5. Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM;IEEE Journal of the Electron Devices Society;2023
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