Demonstration of Fatigue and Recovery Phenomena in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-based 1T1C FeRAM Memory Arrays-Reference-Cited by-同舟云学术

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Demonstration of Fatigue and Recovery Phenomena in Hf_0.5Zr_0.5O₂-based 1T1C FeRAM Memory Arrays

Published:2022-03-06 Issue: Volume: Page:
ISSN:
Container-title:2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Okuno Jun¹,Yonai Tsubasa¹,Kunihiro Takafumi¹,Konishi Kenta¹,Materano Monica²,Ali Tarek³,Lederer Maximilian³,Seidel Konrad³,Mikolajick Thomas²,Schroeder Uwe²,Tsukamoto Masanori¹,Umebayashi Taku¹

Affiliation:

1. Sony Semiconductor Solutions Corporation,Atsugi,Kanagawa,Japan,243-0014

2. NaMLab gGmbH,Dresden,Germany,01187

3. Fraunhofer IPMS - Center Nanoelectronics Technologies,Dresden,Germany,01099

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9797886/9797892/09797943.pdf?arnumber=9797943

Reference5 articles.

1. High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application

2. SoC Compatible 1T1C FeRAM Memory Array Based on Ferroelectric Hf0.5Zr0.5O2

3. Characterization of fatigue and its recovery behavior in ferroelectric HfZrO;liao;IEEE Symp VLSI Tech,2021

4. Ferroelectricity in hafnium oxide thin films

5. Ferroelectric Memories and Beyond;muller;Tutorial,2019

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1. Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Methodology for Testing Key Parameters of Array-Level Small-Area Hafnium-Based Ferroelectric Capacitors Using Time-to-Digital Converter and Capacitance Calibration Circuits;Micromachines;2023-09-27

3. Metal–Ferroelectric–Semiconductor Tunnel Junction: Essential Physics and Design Explorations;IEEE Transactions on Electron Devices;2023-06

4. Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited);2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

5. High endurance (>1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM;Applied Physics Letters;2023-02-20

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