Optimization and Realization of Planar Isolated GaAs Zero-Biased Planar Doped Barrier Diodes for Microwave/Millimeter-Wave Power Detectors/Sensors-Reference-Cited by-同舟云学术

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Optimization and Realization of Planar Isolated GaAs Zero-Biased Planar Doped Barrier Diodes for Microwave/Millimeter-Wave Power Detectors/Sensors

Published:2006-11 Issue:11 Volume:54 Page:3836-3842
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Vo V.T.,Hu Z.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/36141/01717750.pdf?arnumber=1717750

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication Error Modeling and Analysis of an E-Band MHMIC Balanced Power Detector;IEEE Access;2024

2. MMIC GaAs Power Limiter on 30 GHz with a Small Flat Leakage Power;2023 IEEE XVI International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering (APEIE);2023-11-10

3. Microwave detector diodes based on InGaAs/AlGaAs/GaAs heterostructures;Journal of Applied Physics;2020-01-31

4. Detectors Based on Low-Barrier Mott Diodes and Their Characteristics in the 150–250 GHz Range;Technical Physics Letters;2019-03

5. Advanced Terahertz Sensing and Imaging Systems Based on Integrated III-V Interband Tunneling Devices;Proceedings of the IEEE;2017-06

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