MMIC GaAs Power Limiter on 30 GHz with a Small Flat Leakage Power-Reference-Cited by-同舟云学术

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MMIC GaAs Power Limiter on 30 GHz with a Small Flat Leakage Power

Published:2023-11-10 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE XVI International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering (APEIE)
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Author:

Grusha Alexander V.¹,Rebrov Alexander S.¹

Affiliation:

1. RPC "Istok" Named After Shokin,Department of Microelectronics,Fryazino,Russia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10347555/10347542/10347605.pdf?arnumber=10347605

Reference25 articles.

1. GaAs planar doped barriers by molecular beam epitaxy

2. Planar doped barrier semiconductor device;Malik,1983

3. Semiconductor diode;Anand,1994

4. Performance and reliability characteristics of GaAs planar doped barrier detector diodes using carbon-doped acceptor spikes grown by molecular beam epitaxy

5. Temperature dependence of barrier height in GaAs planar doped barrier diodes

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