Microwave detector diodes based on InGaAs/AlGaAs/GaAs heterostructures
Author:
Affiliation:
1. Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
Funder
Ministry of Science and Higher Education of the Russian Federation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5131737
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1. Terahertz radiation detectors: the state-of-the-art
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4. Simulation of Recessed Gate Pseudomorphic AlGaAs/InGaAs/GaAs HEMT for RF Applications;2022 6th International Conference on Devices, Circuits and Systems (ICDCS);2022-04-21
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