A New Extraction Technique for the Complete Small-Signal Equivalent-Circuit Model of InGaP/GaAs HBT Including Base Contact Impedance and AC Current Crowding Effect-Reference-Cited by-同舟云学术

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A New Extraction Technique for the Complete Small-Signal Equivalent-Circuit Model of InGaP/GaAs HBT Including Base Contact Impedance and AC Current Crowding Effect

Published:2006-10 Issue:10 Volume:54 Page:3641-3647
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Tang W.-B.,Wang C.-M.,Hsin Y.-M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/35997/01705682.pdf?arnumber=1705682

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A parameter extraction method for InP HBT small‐signal model considering emitter–collector laminated capacitance effect;Microwave and Optical Technology Letters;2024-08

2. A Knowledge-Guided Neural Network-Based Large-Signal Model for InP HBTs With Self-Heating Effect Consideration;IEEE Transactions on Microwave Theory and Techniques;2024

3. Parasitic parameters extraction of InP HBT only from S-parameters measured under cut-off and normal bias conditions;Solid-State Electronics;2022-11

4. Parasitic Parameters Extraction of Inp Hbt Only from S-Parameters Measured Under Cut-Off and Normal Bias Conditions;SSRN Electronic Journal;2022

5. An analytic method for parameter extraction of InP HBTs small-signal model;Circuit World;2021-06-07

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