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Parasitic parameters extraction of InP HBT only from S-parameters measured under cut-off and normal bias conditions

  • Published:2022-11 Issue: Volume:197 Page:108449
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Qi Junjun,Lu Hongliang,Zhao Ranran,Yan Silu,Cheng Lin,Zhang Yuming

Funder

Shanxi Provincial Key Research and Development Project

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Terahertz signal source and receiver operating near 600 GHz and their 3-D imaging application;Kim;IEEE Trans Microw Theor Technol,2021

2. 80-110-GHz broadband linear PA with 33% peak PAE and comparison of stacked common base and common emitter PA in InP;Liu;IEEE Microw Wireless Compon Lett,2021

3. Machine learning technique based extremely broadband small signal behavioral model for InP DHBTs;Cai;Int J RF Micro CAE,2021

4. An improved transistor modeling methodology exploiting the quasi-static approximation;Jarndal;IEEE J Electron Device,2021

5. An improved nonlinear model for millimeter-wave InP HBT including DC/AC dispersion effects;Zhang;IEEE Microw Wireless Compon Lett,2021

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT;IEEE Transactions on Device and Materials Reliability;2023-12

2. Small-signal behavioral-level modeling of InP HBT based on SO-BP neural network;Solid-State Electronics;2023-11
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