Accumulation gate capacitance of MOS devices with ultrathin high-/spl kappa/ gate dielectrics: modeling and characterization-Reference-Cited by-同舟云学术

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Accumulation gate capacitance of MOS devices with ultrathin high-/spl kappa/ gate dielectrics: modeling and characterization

Published:2006-06 Issue:6 Volume:53 Page:1364-1372
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Islam A.E.,Haque A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/34324/01637632.pdf?arnumber=1637632

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β -Ga2O3;Applied Physics Letters;2023-08-21

2. Defect Engineering at the Al₂O₃/(010) β-Ga₂O₃ Interface via Surface Treatments and Forming Gas Post-Deposition Anneals;IEEE Transactions on Electron Devices;2022-10

3. Effects of high temperature annealing on the atomic layer deposited HfO₂/β-Ga₂O₃ (010) interface;Journal of Applied Physics;2022-01-21

4. Study of interface trap density of AlOxNy/GaN MOS structures;Applied Physics Letters;2021-09-20

5. Bulk FinFET EOT Extraction from Accumulation Capacitance Measurements;IEEE Transactions on Electron Devices;2018-03

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