Study of Laser-Debonded GaN LEDs-Reference-Cited by-同舟云学术

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Study of Laser-Debonded GaN LEDs

Published:2006-09 Issue:9 Volume:53 Page:2266-2272
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chan C.P.,Gao J.,Yue T.M.,Surya C.,Ng A.M.C.,Djuric A.B.,Liu P.C.-K.,Li M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/35290/01677863.pdf?arnumber=1677863

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TiAl Ohmic contact on GaN, in situ high or low doped or Si implanted, epitaxially grown on sapphire or silicon;physica status solidi (a);2012-02-22

2. Si implanted reactivation in GaN grown on sapphire using AlN and oxide cap layers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02

3. Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers;Solid-State Electronics;2011-08

4. Light-emitting diode quality investigation via low-frequency noise characteristics;Solid-State Electronics;2010-08

5. Ni based planar Schottky diodes on gallium nitride (GaN) grown on sapphire;physica status solidi (c);2010-01

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