Light-emitting diode quality investigation via low-frequency noise characteristics-Reference-Cited by-同舟云学术

Light-emitting diode quality investigation via low-frequency noise characteristics

Published:2010-08 Issue:8 Volume:54 Page:781-786
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Palenskis Vilius,Matukas Jonas,Pralgauskaitė Sandra

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

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4. Luminescence properties of defects in GaN;Reshchikov;J Appl Phys,2005

5. Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate;Kladko;J Appl Phys,2009

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