Low frequency noise study for developing of AlGaAs and GaAsBi QW structures for NIR LDs-Reference-Cited by-同舟云学术

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Low frequency noise study for developing of AlGaAs and GaAsBi QW structures for NIR LDs

Published:2022-09-12 Issue: Volume: Page:
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Container-title:2022 24th International Microwave and Radar Conference (MIKON)
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Author:

Glemza Justinas¹,Pralgauskaite Sandra¹,Matukas Jonas¹,Pukiene Simona²,Zelioli Andrea²,Biciunas Andrius²,Cechavicius Bronislovas²,Nargeliene Viktorija³,Butkute Renata²

Affiliation:

1. Inst. of Applied Electrodynamics and Telecommunications Vilnius University,Vilnius,Lithuania

2. Center for Physical Sciences and Technology,Department of Optoelectronics,Vilnius,Lithuania

3. Center for Physical Sciences and Technology,Department of Physical Technologies,Vilnius,Lithuania

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9924553/9924623/09924785.pdf?arnumber=9924785

Reference18 articles.

1. The electron–hole overlap in the parabolic quantum well light emitting diode is much superior to the rectangular: even to that of a staggered quantum well

2. Depopulation mechanism for incoherent terahertz source - THz torch - based on GaAsBi/GaAs quantum well in GaAs/AlGaAs parabolic quantum well;karali?nas;Lithuanian Journal of Physics,2020

3. Properties of the surface generation-recombination noise in 1.94 µm GaSb-based laser diodes

4. Low frequency noise investigation of 2–3 μm GaSb-based laser diodes

5. Multi‐quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth

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