Author:
Glemža Justinas,Palenskis Vilius,Pralgauskaitė Sandra,Vyšniauskas Juozas,Matukas Jonas
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. M.T. Kelemen, J. Gilly, M. Rattunde, et al. Mid-infrared high-power diode lasers and modules, in: Proc. of SPIE, 2010, 7583:75830O.
2. High-power GaInAsSb-AlGaAsSb multiple quantum-well diode lasers emitting at 1.9 μm;Choi;IEEE Photon. Technol. Lett.,1994
3. A. Vizbaras, E. Dvinelis, M. Greibus, et al. High-performance Single-spatial mode GaSb type-I laser diodes around 2.1 µm, in: Proc. of SPIE, 2014, 8993:899319.
4. Room-temperature 3.73 μm GaSb-based type-I quantum-well lasers with quinternary barriers;Vizbaras;Semicond. Sci. Technol.,2012
5. K. Kashani-Shirazi, K. Vizbaras, A. Bachmann, Low-threshold strained quantum-well GaSb-based lasers emitting in the 2.5- to 2.7-μm wavelength range, IEEE Photon. Technol. Lett. 21(16) (2009) 1106–1108.
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