Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash-Reference-Cited by-同舟云学术

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Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash

Published:2019-09 Issue: Volume: Page:
ISSN:
Container-title:2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Author:

Gupta V.¹,Besser A.²,Luza L. Matana³,Soderstrom D.⁴,Javanainen A.⁴,Kettunen H.⁴,Praks J.²,Voss K.-O.⁵,Virtanen A.⁴,Dilillo L.³

Affiliation:

1. ESA/ESEC-Galaxia,Transinne,Belgium

2. Aalto University,School of Electrical Engineering,Espoo,Finland

3. LIRMM, University of Montpellier/CNRS,Montpellier,France

4. University of Jyväskyla,Department of Physics,Finland

5. Material Research Department,Darmstadt,Germany

Funder

European Space Agency

Academy of Finland

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9745606/9745637/09745668.pdf?arnumber=9745668

Reference11 articles.

1. Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

2. Increase in the Heavy-Ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID

3. SRIM – The stopping and range of ions in matter (2010)

4. Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

5. Complete loss of functionality and permanent page fails in NAND flash memories

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