Increase in the Heavy-Ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID-Reference-Cited by-同舟云学术

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Increase in the Heavy-Ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID

Published:2010-12 Issue: Volume: Page:
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Bagatin Marta,Gerardin Simone,Paccagnella Alessandro,Cellere Giorgio,Visconti Angelo,Bonanomi Mauro

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/5657993/05621940.pdf?arnumber=5621940

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Total ionizing dose response of 128 analog states in computational charge-trap memory;IEEE Transactions on Nuclear Science;2023

2. Depth Dependence of Threshold Voltage Shift in 3-D Flash Memories Exposed to X-Rays;IEEE Transactions on Nuclear Science;2021-05

3. Low-energy proton-induced single event effect in NAND flash memories;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2020-07

4. Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories;Microelectronics Reliability;2019-11

5. Vertical Line Fault Mechanism Induced by Heavy Ions in an SLC NAND Flash;2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2019-09

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