High-$\kappa$/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length-Reference-Cited by-同舟云学术

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High-$\kappa$/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length

Published:2010-04 Issue:4 Volume:31 Page:275-277
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Khater M.H.,Zhen Zhang ,Jin Cai ,Lavoie C.,D'Emic C.,Qingyun Yang ,Bin Yang ,Guillorn M.,Klaus D.,Ott J.A.,Yu Zhu ,Ying Zhang ,Changhwan Choi ,Frank M.M.,Kam-Leung Lee ,Narayanan V.,Dae-Gyu Park ,Qiqing Ouyang ,Haensch W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5437354/05419111.pdf?arnumber=5419111

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration;Nanomaterials;2022-04-05

2. High Current Density in Monolayer MoS2 Doped by AlOx;ACS Nano;2021-01-06

3. A Unique Approach to Generate Self-Aligned T-Gate Transistors in Counter-Doped Poly-Si With High Etching Selectivity and Isotropy;IEEE Electron Device Letters;2020-03

4. DC Performance Variations of SOI FinFETs with Different Silicide Thickness;Advances in Condensed Matter Physics;2018

5. Metallic Schottky barrier source/drain nanowire transistors using low-temperature microwave annealed nickel, ytterbium, and titanium silicidation;Materials Science in Semiconductor Processing;2017-11

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