Analysis of Degradation Mechanism in SONOS-TFT Under Hot-Carrier Operation-Reference-Cited by-同舟云学术

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Analysis of Degradation Mechanism in SONOS-TFT Under Hot-Carrier Operation

Published:2010-12 Issue:12 Volume:31 Page:1413-1415
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen Te-Chih,Chang Ting-Chang,Chen Shih-Ching,Hsieh Tien-Yu,Jian Fu-Yen,Lin Chia-Sheng,Li Hung-Wei,Lee Ming-Hsien,Chen Jim-Shone,Shih Ching-Chieh

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5635414/05617211.pdf?arnumber=5617211

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anomalous degradation behaviors under illuminated gate bias stress in a-Si:H thin film transistor;Thin Solid Films;2014-12

2. Investigation of temperature-dependent asymmetric degradation behavior induced by hot carrier effect in oxygen ambiance in In–Ga–Zn-O thin film transistors;Thin Solid Films;2014-12

3. Enhancement of detection by selective modification of silicon nanobelt field-effect transistors via localized Joule heating;Sensors and Actuators B: Chemical;2014-03

4. Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors;ACS Applied Materials & Interfaces;2012-09-26

5. High-Performance Bottom-Gate Poly-Si Polysilicon–Oxide–Nitride–Oxide–Silicon Thin Film Transistors Crystallized by Excimer Laser Irradiation for Two-Bit Nonvolatile Memory Applications;Journal of Nanoscience and Nanotechnology;2012-07-01

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