Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors

Published:2012-09-26 Issue:10 Volume:4 Page:5369-5374
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Bak Jun Yong¹,Yang Sinhyuk²³,Ryu Min Ki³,Ko Park Sang Hee³,Hwang Chi Sun³,Yoon Sung Min¹

Affiliation:

1. Department of Advanced Materials Engineering for Information & Electronics, Kyung Hee University, Yongin, Gyeonggi-do 446-701, Republic of Korea

2. Department of Information Display, Kyung Hee University, Seoul 130-701, Republic of Korea

3. Oxide TFT Research Team, ETRI, Daejeon 305-350, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am301253x

Reference25 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Present status of amorphous In–Ga–Zn–O thin-film transistors

3. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

4. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gate bias stress reliability of a-InGaZnO TFTs under various channel dimension;Microelectronics Reliability;2024-02

2. Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm;Journal of Materials Chemistry C;2024

3. a-IGZO thin-film transistors with transparent ultrathin Al/Ag bilayer source and drain for active neural interfaces;Materials Science in Semiconductor Processing;2023-02

4. Enhancement of electrical stability of metal oxide thin-film transistors against various stresses;Journal of Materials Chemistry C;2023

5. A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling;Electrochemical Science Advances;2021-10-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3