Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory-Reference-Cited by-同舟云学术

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Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

Published:2011-03 Issue:3 Volume:32 Page:276-278
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Gao Bin,Zhang Haowei,Chen Bing,Liu Lifeng,Liu Xiaoyan,Han Ruqi,Kang Jinfeng,Fang Zheng,Yu Hongyu,Yu Bin,Kwong Dim-Lee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5719018/05706342.pdf?arnumber=5706342

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