Comprehensive PDN/PSIJ analysis of silicon capacitor use for 8.533 GT/s LPDDR5X application-Reference-Cited by-同舟云学术

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Comprehensive PDN/PSIJ analysis of silicon capacitor use for 8.533 GT/s LPDDR5X application

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
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Author:

Powers Scott¹,Casanova Jonathan¹,Kundu Arun¹,Ma Xiao²,Sriboonlue Varin¹,Thiruvengadam Srivatsan¹,Shin Jaemin¹

Affiliation:

1. Qualcomm Technologies, Inc.,San Diego,USA

2. Meta Platforms, Inc.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195771.pdf?arnumber=10195771

Reference8 articles.

1. Deep Trench Capacitors in Silicon Interconnect Fabric

2. Multi-terminal Ultra-thin 3D Nanoporous Silicon Capacitor Technology for High-Speed Circuits Decoupling

3. Novel Parallel Resonance Peak Measurement and Lossy Transmission Line Modeling of 2-T and 3-T MLCC Capacitors for PDN Application

4. Integrated Deep Trench Capacitor in Si Interposer for CoWoS Heterogeneous Integration

5. Design and Analysis of Logic-HBM2E Power Delivery System on CoWoS® Platform with Deep Trench Capacitor

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Signal and Power Integrity Performance of CoWoS-R in Chiplet Integration Applications;2023 IEEE 25th Electronics Packaging Technology Conference (EPTC);2023-12-05

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