Integrated Deep Trench Capacitor in Si Interposer for CoWoS Heterogeneous Integration-Reference-Cited by-同舟云学术

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Integrated Deep Trench Capacitor in Si Interposer for CoWoS Heterogeneous Integration

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Hou S.Y.,Wu C.H.,Yu Douglas,Hsia H.,Tsai C.H.,Ting K.C.,Yu T.H.,Lee Y.W.,Chen F.C.,Chiou W.C.,Wang C.T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993498.pdf?arnumber=8993498

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of low-temperature bonding platform using ultra-thin area selective deposition for heterogeneous integration;Applied Surface Science;2023-10

2. Development of Low Cost Glass-Based Deep Trench Capacitor for 3D Packaging;IEEE Electron Device Letters;2023-09

3. CoWoS Architecture Evolution for Next Generation HPC on 2.5D System in Package;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

4. Comprehensive PDN/PSIJ analysis of silicon capacitor use for 8.533 GT/s LPDDR5X application;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

5. On-Interposer Decoupling Capacitors Placement for Interposer-based 3DIC;2023 24th International Symposium on Quality Electronic Design (ISQED);2023-04-05

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