A Study on the Surface Activation of Cu and Oxide for Hybrid Bonding Joint Interface-Reference-Cited by-同舟云学术

A Study on the Surface Activation of Cu and Oxide for Hybrid Bonding Joint Interface

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
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Author:

Hwang Bohee¹,Kim Sanwi²,Lee Jeonghwan²,Lee Soohwan¹,Jee Youngkun¹,Park Sangcheon¹,Jo Gyeongjae¹,Kim Kwangbae¹,Han Sungjin¹,Kim Ilhwan¹,Park Jumyong¹,Jung Hyunchul¹,Kang Dongwoo³,Kang Un-Byoung¹

Affiliation:

1. Samsung Electronics Co., Ltd,Advanced Package Business Team,Cheonan-si,South Korea

2. Samsung Electronics Co., Ltd,Test & System Package,Hwaseong-si,South Korea

3. Samsung Electronics Co., Ltd,AVP Manufacturing Technology Center,Cheonan-si,South Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195593.pdf?arnumber=10195593

Reference13 articles.

1. Interaction Forces Between Silica Particles and Wafer Surfaces during Chemical Mechanical Planarization of Copper

2. Atomistic-scale Simulations on Surface Activation Process of Dielectric Oxides for Hybrid Bonding Applications

3. Development of single cantilever beam method to measure the adhesion of thin film adhesive on silicon chip

4. Bonding of silicon wafers for silicon‐on‐insulator

5. SoIC for Low-Temperature, Multi-Layer 3D Memory Integration

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