1. Overview of Cu contamination during integration in a dual damascene architecture for sub-quarter micron technology
2. S. P. Muraka,Metallization, p. 100, Butterworth-Heinemann, Woburn, MA (1993).
3. S. H. Li and R. O. Miller, inSilicon Processing, pp. 184-186, Academic Press, New York (2000).
4. A. W. Adamson and A. P. Gast,Physical Chemistry of Surfaces, pp. 250-276, John Wiley & Son, Inc., New York (1997).
5. R. J. Stokes and D. F. Evans,Fundamentals of Interfacial Engineering, p. 145, Wiley-VCH, Inc., New York (1997).