Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process-Reference-Cited by-同舟云学术

Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process

Published:2014-08 Issue:3 Volume:27 Page:443-451
ISSN:0894-6507
Container-title:IEEE Transactions on Semiconductor Manufacturing
language:
Short-container-title:IEEE Trans. Semicond. Manufact.

Author:

Fisher Craig A.,Jennings Michael R.,Sharma Yogesh K.,Hamilton Dean P.,Gammon Peter M.,Perez-Tomas Amador,Thomas Stephen M.,Burrows Susan E.,Mawby Philip A.

Funder

University of Warwick EPSRC

Advantage West Midlands and the European Regional Development Fund through the Science City Energy Efficiency project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/66/6869075/06857419.pdf?arnumber=6857419

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of 1^st & 3^rd Quadrant Electrothermal Robustness of Symmetrical and Asymmetrical Double- Trench SiC Power MOSFETs Under UIS;2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe);2022-09-18

2. Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology;Materials;2021-10-05

3. A study on free-standing 3C-SiC bipolar power diodes;Applied Physics Letters;2021-06-14

4. Influence of extended defects and oval shaped facet on the minority carrier lifetime distribution in as-grown 4H-SiC epilayers;Diamond and Related Materials;2019-02

5. Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0);Applied Surface Science;2015-10