A study on free-standing 3C-SiC bipolar power diodes-Reference-Cited by-同舟云学术

A study on free-standing 3C-SiC bipolar power diodes

Published:2021-06-14 Issue:24 Volume:118 Page:242101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Fan¹^ORCID,Renz Arne Benjamin¹^ORCID,Pérez-Tomás Amador²^ORCID,Shah Vishal¹,Gammon Peter¹,Via Francesco La³,Jennings Mike⁴,Mawby Phil¹^ORCID

Affiliation:

1. School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom

2. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, 08193 Barcelona, Spain

3. Consiglio Nazionale delle Ricerche-Instituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII, n.5 Zona Industriale, 95121 Catania, Italy

4. College of Engineering, Swansea University, Swansea SA1 8EN, United Kingdom

Funder

European Commission

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0054433

Reference40 articles.

1. Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process

2. Fabrication of 4H-SiC PiN diodes without bipolar degradation by improved device processes

3. Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga2O3

4. Analysis of the reverse I-V characteristics of diamond-based PIN diodes

5. A 4.5 μm PIN diamond diode for detecting slow neutrons

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