A Novel 1T-1D DRAM Cell for Embedded Application-Reference-Cited by-同舟云学术

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A Novel 1T-1D DRAM Cell for Embedded Application

Published:2012-05 Issue:5 Volume:59 Page:1304-1310
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cao Cheng-Wei,Zang Song-Gan,Lin Xi,Sun Qing-Qing,Xing Charles,Wang Peng-Fei,Zhang David Wei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6186852/06166398.pdf?arnumber=6166398

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GIDL Analysis of 1T1C Structure for Sub-20nm DRAM Cell;2022 IEEE 16th International Conference on Anti-counterfeiting, Security, and Identification (ASID);2022-12-02

2. A predischarged bitline 1T-1C DRAM readout scheme;Microelectronics Journal;2019-01

3. The modified alpha power law based model of statistical fluctuation in nanometer FGMOSFET;Cogent Engineering;2018-01-01

4. Emerging FETs for Low Power and High Speed Embedded Dynamic Random Access Memory;2018 31st International Conference on VLSI Design and 2018 17th International Conference on Embedded Systems (VLSID);2018-01

5. Characterization and Optimization of a Single-Transistor Active Pixel Image Sensor with Floating Junction Connected to Floating Gate;Journal of Sensors;2015

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