Characterization and Optimization of a Single-Transistor Active Pixel Image Sensor with Floating Junction Connected to Floating Gate-Reference-Cited by-同舟云学术

Characterization and Optimization of a Single-Transistor Active Pixel Image Sensor with Floating Junction Connected to Floating Gate

Published:2015 Issue: Volume:2015 Page:1-11
ISSN:1687-725X
Container-title:Journal of Sensors
language:en
Short-container-title:Journal of Sensors

Author:

Liu Xin-Yan¹,Wu Jun¹,Liu Xiao-Yong¹,Zhang Shuai¹,Lin Xi¹,Zhang Chun-Min¹,Wang Peng-Fei¹,Zhang David Wei¹

Affiliation:

1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Room 208, Complex Building, No. 400, Guo Ding Road, Yang Pu District, Shanghai 200433, China

Abstract

The application of semifloating gate transistor (SFGT) as the single-transistor active pixel image sensor (APS) is investigated in this paper. This single-transistor (1T) APS can realize the functions of the conventional 3T CMOS image sensor. The device operation mechanism, optimization methods, and transient behavior measurements will be discussed. Because the floating junction of this device is connected to the floating gate, special behaviors such as floating gate voltage pinning effects were observed. The transient time measurement emulating the exposure procedure also confirmed the light sensing function as a single-transistor image sensor.

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Instrumentation,Control and Systems Engineering

Link

http://downloads.hindawi.com/journals/js/2015/167145.pdf

Reference5 articles.

1. 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors

2. Development of SOI pixel process technology

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4. A Novel 1T-1D DRAM Cell for Embedded Application

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