A New 2T Contact Coupling Gate MTP Memory in Fully CMOS Compatible Process-Reference-Cited by-同舟云学术

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A New 2T Contact Coupling Gate MTP Memory in Fully CMOS Compatible Process

Published:2012-07 Issue:7 Volume:59 Page:1899-1905
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chiu-Wang Lien ,Haw-Yun Wu ,Cheng-Wei Tsai ,Chen-Mei Huang ,Yue-Der Chih ,Te-Liang Lee ,Chrong Jung Lin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6218810/06202329.pdf?arnumber=6202329

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A CMOS-compatible Non-volatile Memory Element using Fishbone-in-cage Capacitor;IPSJ Transactions on System and LSI Design Methodology;2023

2. Design and optimization of multiple-time programmable memory cell by advanced CMOS FinFET technologies;Japanese Journal of Applied Physics;2021-02-18

3. P-channel differential multiple-time programmable memory cells by laterally coupled floating metal gate fin field-effect transistors;Japanese Journal of Applied Physics;2018-03-22

4. Differential multiple-time-programmable memory cells by laterally coupled floating metal gate fin field-effect transistors;Japanese Journal of Applied Physics;2017-02-24

5. A Compact Model for Single-Poly Multitime Programmable Memory Cells;IEEE Transactions on Electron Devices;2016-02

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